silicon switching npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3391 issue 4 page 1 of 3 2N2222ACSM high speed saturated switching hermetic surface mount package. screening options available absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage 75v v ceo collector ? emitter voltage 50v v ebo emitter ? base voltage 6v i c continuous collector current 0.8a p d total power dissipation at t a = 25c 500mw derate above 25c 2.86mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters max. units r ja (1) thermal resistance, junction to ambient 325 c/w r jsp(is) (2) thermal resistance junction to solder pads (infinit e sink mount to pcb). 90 c/w (1) for non-thermal conductive pcb or unknown pcb surfa ce mount conditions in free air (2) infinite sink mount to pcb
silicon switching npn transistor 2N2222ACSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3391 issue 4 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ. max. units v (br)ceo (3) collector-emitter sustaining voltage i c = 10ma i b = 0 50 v i ces collector-emitter cut-off current v ce = 50v 50 na i e = 0 v cb = 75v 10 a i e = 0 v cb = 60v 10 na i cbo collector-base cut-off current t a = 150c 10 a i c = 0 v eb = 4v 10 na i ebo emitter cut-off current v eb = 6v 10 a on characteristics i c = 150ma i b = 15ma 0.3 v ce(sat) (3) collector-emitter saturation voltage i c = 500ma i b = 50ma 1.0 v i c = 150ma i b = 15ma 0.6 1.2 v be(sat) (3) base-emitter saturation voltage i c = 500ma i b = 50ma 2.0 v i c = 0.1ma v ce = 10v 50 i c = 1.0ma v ce = 10v 75 325 i c = 10ma v ce = 10v 100 t a = -55c 35 i c = 150ma v ce = 10v (1) 100 300 h fe dc current gain i c = 500ma v ce = 10v (1) 30 - small signal characteristics c obo output capacitance v cb = 10v i e = 0 f = 1.0mhz 8 c ibo input capacitance v eb = 0.5v i c = 0 f = 1.0mhz 25 pf | h fe | magnitude of small- signal, short-circuit forward current transfer ratio i c = 20ma v ce = 20v f = 100mhz 2.5 - h fe small signal current gain i c = 1.0ma v ce = 10v f = 1.0khz 50 - (3) pulse width 300us, 2%
silicon switching npn transistor 2N2222ACSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 3391 issue 4 page 3 of 3 switching characteristics symbols parameters test conditions min. typ. max. units t on saturated turn-on time 35 t off saturated turn-off time v cc = 30v i c = 150ma i b 1 = 15ma 300 ns mechanical data dimensions in mm (inches) 2 1 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2 . 54 0 . 13 ( 0 . 10 0 . 005 ) 0 . 76 0 . 15 ( 0 . 03 0 . 006 ) 1.02 0.10 (0.04 0.004) 1.40 (0.055) max. a 0.31 (0.012) rad. rad. a = 3 lcc1 underside view pad 1 - base pad 2 - emitter pad 3 - collector
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